| PART |
Description |
Maker |
| CT20ASL-8 |
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
|
Renesas Electronics Corporation
|
| CT30VM-8 |
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
|
Renesas Electronics Corporation
|
| CT20TM-8 |
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
|
Renesas Electronics Corporation
|
| CT20VM-8 |
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
|
Renesas Electronics Corporation
|
| CT20VML-8 |
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
|
Renesas Electronics Corporation
|
| CT60AM-18B |
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR RESONANT INVERTER USE
|
Renesas Electronics Corporation
|
| CT90AM-18 |
CT90AM-18 Datasheet 43K/MAR.20.03
MITSUBISHI Nch IGBT INSULATED GATE BIPOLAR TRANSISTOR
|
Renesas Electronics Corporation
|
| CR8PM-12 CR8PM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
MITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| QM100HA-H QM100HY-H |
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| IRG4PC40FPBF IRG4PC40FPBF-15 |
INSULATED GATE BIPOLAR TRANSISTOR
INSULATED GATE BIPOLARTRANSISTOR Fast Speed IGBT
|
International Rectifier
|
| QM30HC-2H |
MITSUBISHI TRANSISTOR MODULES INDUCTION HEATER USE NON-INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| QM100HC-M |
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
